Mfg Part Number: 21049368-101 | Alternate P/N: 21049368101 | Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor |
NSN : 5962-01-358-5656 | Item Name : microcircuit memory | CAGE Code : 81395 |
FSC : 5962 Microcircuits Electronic |
Thank you for your interest in NSN Part 21049368-101 of Microcircuit Memory at Automatic Aerospace. This Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor manufacturer item is listed alongside with NSN 5962-01-358-5656 and part 21049368-101 for your reference. As this product is currently available, we encourage you to take advantage of our Instant RFQ service in order to acquire a competitive quote for your comparisons. With 24/7x365 team member availability, responses to requests or inquiries are completed with haste.
Explore our listings at your leisure and you will find that the part 21049368-101 of NSN 5962-01-358-5656 can be found listed under CAGE Code 81395. However, we carry an array of other NSN parts, all of which have been sourced from reputable distributors like Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Kickoff the purchasing process with a quote request that includes all of your part requirements and see how Automatic Aerospace can serve as your go-to sourcing solution. For additional questions, call or email us directly; we are on standby for our customers.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-5656 Item Description: Microcircuit Memory | 5962 | 013585656 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
21049368-101 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ERASABLE AND PROGRAMMED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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