Online Quote for HM3-6514-9 Part with NSN 5962011382050 by Intersil Communications Inc Now

Mfg Part Number: HM3-6514-9	Alternate P/N: HM365149	Manufacturer: Intersil Communications Inc
NSN : 5962-01-138-2050	Item Name : microcircuit memory	CAGE Code : 1MY79
FSC : 5962 Microcircuits Electronic

Thank you for your interest in NSN Part HM3-6514-9 of Microcircuit Memory at Automatic Aerospace. This Intersil Communications Inc manufacturer item is listed alongside with NSN 5962-01-138-2050 and part HM3-6514-9 for your reference. As this product is currently available, we encourage you to take advantage of our Instant RFQ service in order to acquire a competitive quote for your comparisons. With 24/7x365 team member availability, responses to requests or inquiries are completed with haste.

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Explore our listings at your leisure and you will find that the part HM3-6514-9 of NSN 5962-01-138-2050 can be found listed under CAGE Code 1MY79. However, we carry an array of other NSN parts, all of which have been sourced from reputable distributors like Intersil Communications Inc. Kickoff the purchasing process with a quote request that includes all of your part requirements and see how Automatic Aerospace can serve as your go-to sourcing solution. For additional questions, call or email us directly; we are on standby for our customers.

NSN Information for Part Number HM3-6514-9 with NSN 5962-01-138-2050, 5962011382050

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-138-2050 Item Description: Microcircuit Memory	5962	011382050	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Hm3-6514-9	3	1	C			9

Characteristics Data of NSN 5962-01-138-2050, 5962011382050

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 910 INCHES NOMINAL
MEMORY	ADAT	BODY WIDTH0 255 INCHES NOMINAL
MEMORY	ADAU	BODY HEIGHT0 135 INCHES NOMINAL
MEMORY	AFGA	OPERATING TEMP RANGE-0 075 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONANGRC-212 13499
MEMORY	CBBL	FEATURES PROVIDEDLOW POWER AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND WENABLE
MEMORY	CQSJ	INCLOSURE MATERIALRESIN
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN16 INPUT
MEMORY	CRHL	BIT QUANTITY4096
MEMORY	CSWJ	WORD QUANTITY1024
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 8 3 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT